inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUX41N description collector-emitter voltage- : v ceo = 160v(min) high current capability good linearity of h fe applications designed for high speed, high current, high power applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.46 /w symbol parameter value unit v cbo collector-base voltage 220 v v ceo collector-emitter voltage 160 v v cex collector-emitter voltage v be = -1.5v 220 v v cer collector-emitter voltage r be = 100 200 v v ebo emitter-base voltage 7 v i c collector current-continuous 18 a i cm collector current-peak 25 a i b base current-continuous 3.6 a p c collector power dissipation @t c =100 120 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUX41N electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma ; i b = 0, l= 25mh 160 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c =8a; i b =0.8a 1.2 v v ce (sat)-2 collector-emitter saturation voltage i c =12a; i b =1.5a 1.6 v v be (sat) base-emitter saturation voltage i c =12a; i b =1.5a 2.0 v i ceo collector cutoff current v ce =130v; i b = 0 1.0 ma i cex collector cutoff current v ce = 220v; v be = -1.5v v ce = 220v; v be = -1.5v; t c = 125 1.0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 1.0 ma h fe-1 dc current gain i c = 8a ; v ce = 4v 15 45 h fe-2 dc current gain i c = 12a ; v ce = 4v 8 f t current-gainbandwidth product i c = 1a ; v ce = 15v; f=10mhz 8 mhz switching times; resistive laod t on turn-on time i c = 12a ;i b1 = -i b2 = 1.5a; v cc = 30v; r b = 3.9 ; r c = 2.5 1.3 s t s storage time 1.5 s t f fall time 0.8 s
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